DEI 2SC2879 100W Silicon NPN RF Power Transistor (2-30 MHz)
DEI 2SC2879 100W Silicon NPN RF Power Transistor (2-30 MHz)
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DEI 2SC2879 100W Silicon NPN RF Power Transistor (2-30 MHz)

$ 49.12 $ 48.91

DESCRIPTION

The DEI 2SC2879 silicon NPN radio frequency power transistor is primarily designed for 2 - 30 MHz SSB linear power amplifier applications. The 2SC2879 is rated for 100 watts PEP output power at 12.5 volts DC supply with a typical gain of 15.2 db. The DEI 2SC2879 is designed to be equivalent to other brands of 2SC2879 transistors. DEI Semiconductor is a division of Palomar Electronics. For datasheets, please contact Palomar Electronics.
  • 100 Watt PEP RF Power Transistor
  • 2 - 30 MHz SSB Linear Power Applications
  • 12.5V DC Operating Voltage
  • Gap = 15.2 (type) at 100W / 28 MHz
  • IMD3 = -24 dB max at 100 W (PEP)
100 Watt PEP RF Power TransistorDEI

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